Spin polarization demonstrated at room temperature |
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Written by Hugh McManus | |||
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November 28, 2009: An article in the journal Nature gives hope to the idea of using electron spin, or intrinsic angular momentum, as a way to store binary data. Researchers reported producing spin polarized electrons in silicon at room temperature. Historically, electronic information is stored through a system of transistors–the traditional transistor-transistor logic or TTL system. The system produces two states: a slightly negative voltage or none. More recently systems use CMOS or something equivalent, where a charge can either be stored at a junction of be absent. Each system uses two states: one representing 1, the other 0. Intrinsic angular momentum can be classified as either up or down, providing the basic difference needed for a modern storage system. This article represents a first step in using spin to store information; such a system is expected to use much less energy and provide a greater information density than current systems.
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